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| Chip Schottky Barrier Diodes FM1020-T THRU FM1040-T Silicon epitaxial planer type Formosa MS SMC-T 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.071(1.8) 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C IR Rq JA CJ TSTG -55 55 700 +150 CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 10.0 150 1.0 50 o UNIT A A mA mA C/w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage C SYMBOLS MARKING CODE SS102 SS103 SS104 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) (V) FM1020-T FM1030-T FM1040-T 20 30 40 (V) 14 21 28 (V) 20 30 40 (V) *1 Repetitive peak reverse voltage *2 RMS voltage 0.55 -55 to +125 *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (FM1020-T THRU FM1040-T) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 12 10 50 INSTANTANEOUS FORWARD CURRENT,(A) 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 10 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle CASE TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 250 0.1 PEAK FORWARD SURGE CURRENT,(A) 200 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLT AGE,(V) 150 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 100 50 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 2800 2400 2000 1600 1200 800 400 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 Tj=75 C Tj=25 C .1 .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) |
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